Infrared light gated MoS_2 field effect transistor
نویسندگان
چکیده
منابع مشابه
Compact modeling of Optically-Gated Carbon NanoTube Field Effect Transistor
Background Carbon Nanotube Field Effect Transistors (CNTFETs) have high charge sensitivity at room temperature [1]. By using this sensitivity, some nonvolatile memory devices have been demonstrated with charge trapping in SiO 2 gate insulator [2, 3]. Besides, a new design of synapse-like circuit requires a multi-level nonvolatile memory [4]. For this application, and according to its high charg...
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ژورنال
عنوان ژورنال: Optics Express
سال: 2015
ISSN: 1094-4087
DOI: 10.1364/oe.23.031908